Mfr
Infineon Technologies
Series
HEXFET®, StrongIRFET™
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6852 pF @ 25 V
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX