Part Number Overview

Manufacturer Part Number
IMW120R045M1XKSA1
Description
SICFET N-CH 1.2KV 52A TO247-3
Detailed Description
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IMW120R045M1XKSA1 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IMW120

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IMW120R045M1XKSA1-ND
SP001346254
448-IMW120R045M1XKSA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IMW120R045M1XKSA1

Documents & Media

Datasheets
1(IMW120R045M1)
Featured Product
()
HTML Datasheet
1(IMW120R045M1)
EDA Models
1(IMW120R045M1XKSA1 Models)

Quantity Price

Quantity: 510
Unit Price: $14.14869
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $15.61233
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $16.588
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $20.49
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : MSC025SMA120B
Manufacturer. : Microchip Technology
Quantity Available. : 30
Unit Price. : $40.13000
Substitute Type. : Similar