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Part Number Overview
Manufacturer Part Number
HUF76113T3ST
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 4.7A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
544
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
625 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF76113T3ST
HARHARHUF76113T3ST
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF76113T3ST
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 544
Unit Price: $0.55
Packaging: Bulk
MinMultiplier: 544
Packaging: Bulk
MinMultiplier: 544
Substitutes
-