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Part Number Overview
Manufacturer Part Number
TK10A80W,S4X
Description
MOSFET N-CH 800V 9.5A TO220SIS
Detailed Description
N-Channel 800 V 9.5A (Ta) 40W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
20 Weeks
Edacad Model
TK10A80W,S4X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK10A80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK10A80WS4X
TK10A80W,S4X(S
264-TK10A80W,S4X
TK10A80WS4X-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK10A80W,S4X
Documents & Media
Datasheets
1(TK10A80W)
Featured Product
()
EDA Models
1(TK10A80W,S4X Models)
Quantity Price
Quantity: 5000
Unit Price: $1.275
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Unit Price: $2.73
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