Part Number Overview

Manufacturer Part Number
SCTWA20N120
Description
IC POWER MOSFET 1200V HIP247
Detailed Description
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ Long Leads
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCTWA20N120 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™ Long Leads
Package / Case
TO-247-3
Base Product Number
SCTWA20

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTWA20N120

Documents & Media

Datasheets
1(SCTWA20N120)
EDA Models
1(SCTWA20N120 Models)

Quantity Price

Quantity: 500
Unit Price: $12.0499
Packaging: Tube
MinMultiplier: 1
Quantity: 250
Unit Price: $12.88092
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $13.5458
Packaging: Tube
MinMultiplier: 1
Quantity: 25
Unit Price: $15.374
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $16.039
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $17.45
Packaging: Tube
MinMultiplier: 1

Substitutes

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