Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Rds On (Max) @ Id, Vgs
143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
268pF @ 10V, 250pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
UF6
Base Product Number
SSM6L13