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Part Number Overview
Manufacturer Part Number
IRLD110
Description
MOSFET N-CH 100V 1A 4DIP
Detailed Description
N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRLD110 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRLD110
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRLD110
Documents & Media
Datasheets
1(IRLD110)
PCN Obsolescence/ EOL
1(SIL-018-2015-Rev-0 20/May/2015)
HTML Datasheet
1(IRLD110)
EDA Models
1(IRLD110 Models)
Quantity Price
-
Substitutes
Part No. : IRLD110PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 1,982
Unit Price. : $1.66000
Substitute Type. : Direct
Quantity Available. : 1,982
Unit Price. : $1.66000
Substitute Type. : Direct