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Part Number Overview
Manufacturer Part Number
IRLL024NPBF
Description
MOSFET N-CH 55V 3.1A SOT223
Detailed Description
N-Channel 55 V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
80
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.6 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLL024NPBF
Documents & Media
Datasheets
1(IRLL024NPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
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HTML Datasheet
1(IRLL024NPbF)
Quantity Price
-
Substitutes
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