SIHP22N60E-GE3

Part Number Overview

Manufacturer Part Number

SIHP22N60E-GE3

Description

MOSFET N-CH 600V 21A TO220AB

Detailed Description

N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole

Manufacturer

Vishay Siliconix

Standard LeadTime

21 Weeks

Edacad Model

Standard Package

1,000

Supplier Stocks

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Technical specifications

Mfr

Vishay Siliconix

Series

E

Package

Tube

Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1920 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Base Product Number

SIHP22

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

SIHP22N60E-GE3CT

SIHP22N60E-GE3TRINACTIVE

SIHP22N60E-GE3TR

SIHP22N60E-GE3TR-ND

SIHP22N60E-GE3CT-ND

SIHP22N60E-GE3DKRINACTIVE

SIHP22N60E-GE3DKR

SIHP22N60E-GE3DKR-ND

Documents & Media

Datasheets

()

Product Training Modules

1(High Voltage MOSFET E Series and PFC Device Selection)

Quantity Price

Quantity: 5000

Unit Price: $1.8125
Packaging: Tube
MinMultiplier: 1

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Quantity: 10

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Packaging: Tube
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Quantity: 1

Unit Price: $3.88
Packaging: Tube
MinMultiplier: 1

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SIHP22N60E-GE3

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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