Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs
25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
486pF @ 10V, 642pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
U-DFN2020-6 (Type B)
Base Product Number
DMC2025