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Part Number Overview
Manufacturer Part Number
TK6A65D(STA4,Q,M)
Description
MOSFET N-CH 650V 6A TO220SIS
Detailed Description
N-Channel 650 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
20 Weeks
Edacad Model
TK6A65D(STA4,Q,M) Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.11Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK6A65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK6A65DSTA4QM
TK6A65D(STA4QM)
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK6A65D(STA4,Q,M)
Documents & Media
Datasheets
1(TK6A65D)
Featured Product
1(Server Solutions)
EDA Models
1(TK6A65D(STA4,Q,M) Models)
Product Drawings
()
Quantity Price
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