Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
6mOhm @ 12A, 8V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1260pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-VSON (3.3x3.3)
Base Product Number
CSD87334Q3