Part Number Overview

Manufacturer Part Number
FPF2C8P2NL07A
Description
INSULATED GATE BIPOLAR TRANSISTO
Detailed Description
IGBT Module Field Stop Three Phase 650 V 30 A 135 W Chassis Mount F2
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Field Stop
Configuration
Three Phase
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
30 A
Power - Max
135 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 30A
Current - Collector Cutoff (Max)
250 µA
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
F2 Module
Supplier Device Package
F2

Environmental & Export Classifications

ECCN
EAR99
HTSUS
8542.39.0001

Other Names

2156-FPF2C8P2NL07A
FAIFSCFPF2C8P2NL07A

Category

/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Fairchild Semiconductor FPF2C8P2NL07A

Documents & Media

Datasheets
1(FPF2C8P2NL07A Datasheet)

Quantity Price

Quantity: 4
Unit Price: $81.42
Packaging: Bulk
MinMultiplier: 4

Substitutes

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