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Part Number Overview
Manufacturer Part Number
IRL40S212
Description
MOSFET N-CH 40V 195A D2PAK
Detailed Description
N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
StrongIRFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRL40
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRL40S212DKR-ND
IRL40S212CT
IRL40S212CT-ND
IRL40S212TR-ND
IRL40S212TRINACTIVE
IRL40S212DKRINACTIVE
SP001568454
IRL40S212TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL40S212
Documents & Media
Datasheets
1(IRL40B212, IRL40S212)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRL40B212, IRL40S212)
Simulation Models
1(IRL40S212 Saber File)
Quantity Price
-
Substitutes
Part No. : IRL40S212ARMA1
Manufacturer. : Infineon Technologies
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