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Part Number Overview
Manufacturer Part Number
SIHW23N60E-GE3
Description
MOSFET N-CH 600V 23A TO247AD
Detailed Description
N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-247AD
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SIHW23N60E-GE3 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2418 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
SIHW23
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHW23N60E-GE3
Documents & Media
Datasheets
1(SIHW23N60E-GE3)
PCN Assembly/Origin
1(SIL-070-2014-Rev-0 19/Jun/2014)
HTML Datasheet
1(SIHW23N60E-GE3)
EDA Models
1(SIHW23N60E-GE3 Models)
Quantity Price
-
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