Part Number Overview

Manufacturer Part Number
SSM3J306T(TE85L,F)
Description
MOSFET P-CH 30V 2.4A TSM
Detailed Description
P-Channel 30 V 2.4A (Ta) 700mW (Ta) Surface Mount TSM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
117mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SSM3J306

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

SSM3J306T(TE85LF)DKR
SSM3J306TTE85LF
SSM3J306T (TE85L,F)
SSM3J306T(TE85LF)CT
SSM3J306T(TE85LF)TR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage SSM3J306T(TE85L,F)

Documents & Media

Datasheets
1(SSM3J306T)

Quantity Price

-

Substitutes

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