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Part Number Overview
Manufacturer Part Number
IPA180N10N3GXKSA1
Description
MOSFET N-CH 100V 28A TO220-FP
Detailed Description
N-Channel 100 V 28A (Tc) 30W (Tc) Through Hole PG-TO220-FP
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
3.5V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPA1-ND80N10N3GXKSA1-ND
IPA180N10N3 G
IPA180N10N3 G-ND
IFEINFIPA180N10N3GXKSA1
SP000480108
IPA180N10N3G
2156-IPA180N10N3GXKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA180N10N3GXKSA1
Documents & Media
Datasheets
1(IPA180N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA180N10N3 G)
Simulation Models
1(MOSFET OptiMOS™ 100V N-Channel Spice Model)
Quantity Price
-
Substitutes
Part No. : IPP180N10N3GXKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 170
Unit Price. : $1.23000
Substitute Type. : Similar
Quantity Available. : 170
Unit Price. : $1.23000
Substitute Type. : Similar