China
Spain
Rusia
Italy
GermanyRFG50N05
Part Number Overview
Manufacturer Part Number
RFG50N05
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 50 V 50A (Tc) 132W (Tc) Through Hole TO-247
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
58
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250nA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-RFG50N05
HARHARRFG50N05
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFG50N05
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 58
Unit Price: $5.22
Packaging: Bulk
MinMultiplier: 58
Packaging: Bulk
MinMultiplier: 58
Substitutes
-