Part Number Overview

Manufacturer Part Number
SI2327DS-T1-GE3
Description
MOSFET P-CH 200V 380MA SOT23-3
Detailed Description
P-Channel 200 V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2327

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

SI2327DS-T1-GE3TR
SI2327DST1GE3
SI2327DS-T1-GE3CT
SI2327DS-T1-GE3DKR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI2327DS-T1-GE3

Documents & Media

Datasheets
1(SI2327DS)
Environmental Information
()
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI2327DS)

Quantity Price

-

Substitutes

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