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Part Number Overview
Manufacturer Part Number
BSH111,235
Description
MOSFET N-CH 55V 335MA TO236AB
Detailed Description
N-Channel 55 V 335mA (Ta) 830mW (Tc) Surface Mount TO-236AB
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
BSH111,235 Models
Standard Package
10,000
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 8 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
934056036235
BSH111 /T3
BSH111 /T3-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. BSH111,235
Documents & Media
Datasheets
1(BSH111)
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Packaging
1(All Dev Label Chgs 2/Aug/2020)
HTML Datasheet
1(BSH111)
EDA Models
1(BSH111,235 Models)
Quantity Price
-
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