Part Number Overview

Manufacturer Part Number
SIA430DJ-T4-GE3
Description
MOSFET N-CH 20V 12A/12A PPAK
Detailed Description
N-Channel 20 V 12A (Ta), 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA430

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA430DJ-T4-GE3

Documents & Media

Datasheets
1(SIA430DJ)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIA430DJ)

Quantity Price

-

Substitutes

Part No. : SIA430DJT-T4-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $0.16544
Substitute Type. : Direct
Part No. : DMN2015UFDE-7
Manufacturer. : Diodes Incorporated
Quantity Available. : 2,985
Unit Price. : $0.50000
Substitute Type. : Similar