Mfr
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
48mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 30 V
Power Dissipation (Max)
66W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220