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Part Number Overview
Manufacturer Part Number
BUK952R8-60E,127
Description
MOSFET N-CH 60V 120A TO220AB
Detailed Description
N-Channel 60 V 120A (Tc) 349W (Tc) Through Hole TO-220AB
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
17450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
BUK95
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
934066522127
568-9862-5
2156-BUK952R8-60E127-NX
NEXNXPBUK952R8-60E,127
BUK952R860E127
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK952R8-60E,127
Documents & Media
Datasheets
1(BUK952R8-60E)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Assembly/Origin
1(Wafer Fab Source 09/Jun/2014)
PCN Packaging
()
HTML Datasheet
1(BUK952R8-60E)
Quantity Price
-
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