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Part Number Overview
Manufacturer Part Number
IRFS3306PBF
Description
MOSFET N-CH 60V 120A D2PAK
Detailed Description
N-Channel 60 V 120A (Tc) 230W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
64-2123PBF
64-2123PBF-ND
SP001578320
2156-IRFS3306PBF
INFINFIRFS3306PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFS3306PBF
Documents & Media
Datasheets
1(IRF(B,S,SL)3306PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
()
PCN Design/Specification
()
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRF(B,S,SL)3306PbF)
Simulation Models
1(IRFB3306PBF Saber Model)
Quantity Price
-
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