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Part Number Overview
Manufacturer Part Number
IPD06P002NATMA1
Description
MOSFET P-CH 60V 35A TO252-3
Detailed Description
P-Channel 60 V 35A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD06P
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD06P002NATMA1
Documents & Media
Datasheets
1(IPD06P002N)
HTML Datasheet
1(IPD06P002N)
Quantity Price
-
Substitutes
Part No. : IPD380P06NMATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 20,804
Unit Price. : $2.26000
Substitute Type. : Similar
Quantity Available. : 20,804
Unit Price. : $2.26000
Substitute Type. : Similar