China
Spain
Rusia
Italy
Germany2SB880
Part Number Overview
Manufacturer Part Number
2SB880
Description
PNP DARLINGTON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 60 V 4 A 20MHz 1.75 W Through Hole TO-220AB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
544
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 4mA, 2A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 2A, 2V
Power - Max
1.75 W
Frequency - Transition
20MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSSNY2SB880
2156-2SB880
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB880
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 544
Unit Price: $0.55
Packaging: Bulk
MinMultiplier: 544
Packaging: Bulk
MinMultiplier: 544
Substitutes
-