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Part Number Overview
Manufacturer Part Number
IRF830LPBF
Description
MOSFET N-CH 500V 4.5A TO262-3
Detailed Description
N-Channel 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) Through Hole TO-262-3
Manufacturer
Vishay Siliconix
Standard LeadTime
8 Weeks
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF830
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF830LPBF
Documents & Media
Datasheets
1(IRF830S)
PCN Assembly/Origin
1(Mult Devices 18/Jul/2017)
HTML Datasheet
1(IRF830S)
Product Drawings
()
Quantity Price
Quantity: 1000
Unit Price: $1.08737
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
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