Part Number Overview

Manufacturer Part Number
FCP25N60N
Description
MOSFET N-CH 600V TO-220-3
Detailed Description
N-Channel 600 V 25A (Tc) 216W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
FCP25N60N Models
Standard Package
75
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
SupreMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3352 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
216W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FCP25

Environmental & Export Classifications

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.39.0001

Other Names

FAIFSCFCP25N60N
2156-FCP25N60N

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP25N60N

Documents & Media

Datasheets
1(FCP25N60N-F102 Datasheet)
EDA Models
1(FCP25N60N Models)

Quantity Price

Quantity: 75
Unit Price: $4.02
Packaging: Bulk
MinMultiplier: 75

Substitutes

-