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Part Number Overview
Manufacturer Part Number
IGLD60R190D1AUMA1
Description
GAN N-CH 600V 10A LSON-8
Detailed Description
N-Channel 600 V 10A (Tc) 62.5W (Tc) Surface Mount PG-LSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IGLD60R190D1AUMA1 Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad
Base Product Number
IGLD60
Environmental & Export Classifications
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IGLD60R190D1AUMA1DKR
448-IGLD60R190D1AUMA1TR
448-IGLD60R190D1AUMA1CT
SP001705426
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGLD60R190D1AUMA1
Documents & Media
Datasheets
1(IGLD60R190D1)
EDA Models
1(IGLD60R190D1AUMA1 Models)
Quantity Price
-
Substitutes
Part No. : IGLD60R190D1AUMA3
Manufacturer. : Infineon Technologies
Quantity Available. : 2,344
Unit Price. : $5.98000
Substitute Type. : Direct
Quantity Available. : 2,344
Unit Price. : $5.98000
Substitute Type. : Direct