Part Number Overview

Manufacturer Part Number
PH5525L,115
Description
MOSFET N-CH 25V 81.7A LFPAK56
Detailed Description
N-Channel 25 V 81.7A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
81.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16.6 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2150 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
PH55

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

PH5525L T/R
PH5525L T/R-ND
934060924115
954-PH5525L115

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH5525L,115

Documents & Media

Datasheets
1(PH5525L)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 31/Dec/2011)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PH5525L)

Quantity Price

-

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