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Part Number Overview
Manufacturer Part Number
IPP70N10S312AKSA1
Description
MOSFET N-CH 100V 70A TO220-3
Detailed Description
N-Channel 100 V 70A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4355 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP70N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIPP70N10S312AKSA1
IPP70N10S3-12
IPP70N10S312
SP000407122
IPP70N10S3-12-ND
2156-IPP70N10S312AKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP70N10S312AKSA1
Documents & Media
Datasheets
1(IPx70N10S3-12)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Sep/2019)
Simulation Models
1(OptiMOS-T-100V-Spice Model)
Quantity Price
-
Substitutes
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