Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
Module
Base Product Number
BSM120