Part Number Overview

Manufacturer Part Number
BSM120D12P2C005
Description
MOSFET 2N-CH 1200V 120A MODULE
Detailed Description
Mosfet Array 1200V (1.2kV) 120A (Tc) 780W Module
Manufacturer
Rohm Semiconductor
Standard LeadTime
17 Weeks
Edacad Model
BSM120D12P2C005 Models
Standard Package
12
Supplier Stocks

Technical specifications

Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
780W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM120

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM120D12P2C005

Documents & Media

Datasheets
()
Other Related Documents
1(SiCPMCtype Inner Structure)
Product Training Modules
()
Video File
()
Environmental Information
()
Featured Product
()
HTML Datasheet
()
EDA Models
1(BSM120D12P2C005 Models)
Simulation Models
1(BSM120D12P2C005 Spice Model)
Reliability Documents
1(SiC PM Reliability Test)

Quantity Price

Quantity: 10
Unit Price: $380.362
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $395.22
Packaging: Bulk
MinMultiplier: 1

Substitutes

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