China
Spain
Rusia
Italy
GermanyIRL3102SPBF
Part Number Overview
Manufacturer Part Number
IRL3102SPBF
Description
MOSFET N-CH 20V 61A D2PAK
Detailed Description
N-Channel 20 V 61A (Tc) 89W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRL3102SPBF
SP001576532
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3102SPBF
Documents & Media
Datasheets
1(IRL3102SPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3102S Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3102SPbF)
Quantity Price
-
Substitutes
-