Part Number Overview

Manufacturer Part Number
FQB12P10TM
Description
MOSFET P-CH 100V 11.5A D2PAK
Detailed Description
P-Channel 100 V 11.5A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB1

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB12P10TM

Documents & Media

Datasheets
1(FQB12P10, FQI12P10)
Environmental Information
()
HTML Datasheet
1(FQB12P10, FQI12P10)

Quantity Price

-

Substitutes

Part No. : IRF5210STRLPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 3,507
Unit Price. : $2.93000
Substitute Type. : Similar