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Part Number Overview
Manufacturer Part Number
FQD2N100TM
Description
MOSFET N-CH 1000V 1.6A DPAK
Detailed Description
N-Channel 1000 V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
FQD2N100
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQD2N100TMTR
FQD2N100TM-ND
FQD2N100TMCT
ONSONSFQD2N100TM
2832-FQD2N100TM
2156-FQD2N100TM-OS
FQD2N100TMDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD2N100TM
Documents & Media
Datasheets
1(FQD2N100, FQU2N100)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 20/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev Wafer Fab/Site Transfer 02/Jan/2024)
PCN Packaging
()
HTML Datasheet
1(FQD2N100, FQU2N100)
Quantity Price
-
Substitutes
-