Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
215mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSMT6 (SC-95)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
QS6U22