China
Spain
Rusia
Italy
GermanyIRF6711STR1PBF
Part Number Overview
Manufacturer Part Number
IRF6711STR1PBF
Description
MOSFET N-CH 25V 19A DIRECTFET
Detailed Description
N-Channel 25 V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001527012
IRF6711STR1PBFTR
IRF6711STR1PBFCT
IRF6711STR1PBFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6711STR1PBF
Documents & Media
Datasheets
1(IRF6711S(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6711S(TR)PbF)
Product Drawings
1(IR Hexfet Circuit)
Quantity Price
-
Substitutes
Part No. : IRF6711STRPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Parametric Equivalent
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Parametric Equivalent