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Part Number Overview
Manufacturer Part Number
PHB18NQ10T,118
Description
MOSFET N-CH 100V 18A D2PAK
Detailed Description
N-Channel 100 V 18A (Tc) 79W (Tc) Surface Mount D2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
671
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
633 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-PHB18NQ10T,118
NEXNXPPHB18NQ10T,118
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHB18NQ10T,118
Documents & Media
Datasheets
1(PHB18NQ10T,118 Datasheet)
Quantity Price
Quantity: 671
Unit Price: $0.45
Packaging: Bulk
MinMultiplier: 671
Packaging: Bulk
MinMultiplier: 671
Substitutes
-