IPP26CN10NGHKSA1

Part Number Overview

Manufacturer Part Number

IPP26CN10NGHKSA1

Description

MOSFET N-CH 100V 35A TO220-3

Detailed Description

N-Channel 100 V 35A (Tc) 71W (Tc) Through Hole PG-TO220-3

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

OptiMOS™

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2070 pF @ 50 V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Base Product Number

IPP26C

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

IPP26CN10N G-ND

SP000096471

IPP26CN10NGXK

IPP26CN10N G

IPP26CN10NGX

SP000680922

Documents & Media

Datasheets

1(IPx2xCN10N G)

Quantity Price

-

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IPP26CN10NGHKSA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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