Part Number Overview

Manufacturer Part Number
SIS414DN-T1-GE3
Description
MOSFET N-CH 30V 20A PPAK1212-8
Detailed Description
N-Channel 30 V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta), 31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS414

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SIS414DNT1GE3
SIS414DN-T1-GE3DKR
SIS414DN-T1-GE3CT
SIS414DN-T1-GE3TR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS414DN-T1-GE3

Documents & Media

Datasheets
1(SiS414DN)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SiS414DN)

Quantity Price

-

Substitutes

Part No. : SISA88DN-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 37,568
Unit Price. : $0.51000
Substitute Type. : Similar
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Manufacturer. : Rohm Semiconductor
Quantity Available. : 40,756
Unit Price. : $0.50000
Substitute Type. : Similar
Part No. : RQ3E100MNTB1
Manufacturer. : Rohm Semiconductor
Quantity Available. : 5,261
Unit Price. : $1.00000
Substitute Type. : Similar