Part Number Overview

Manufacturer Part Number
PH3830L,115
Description
MOSFET N-CH 30V 98A LFPAK56
Detailed Description
N-Channel 30 V 98A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3190 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
PH38

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

PH3830L T/R
568-2346-6
568-2346-2
PH3830L115
NEXNXPPH3830L115
568-2346-1
934057827115
2156-PH3830L115-NXTR
954-PH3830L115

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH3830L,115

Documents & Media

Datasheets
1(PH3830L)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PH3830L)

Quantity Price

-

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