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Part Number Overview
Manufacturer Part Number
STW24N60M2
Description
N-channel 600 V, 0.168 Ohm typ.,
Detailed Description
N-Channel 600 V 18A (Tc) 150W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STW24N60M2 Models
Standard Package
600
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ II Plus
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW24
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-497-13594-5
5060-STW24N60M2
497-13594-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW24N60M2
Documents & Media
Datasheets
1(STx24N60M2)
Other Related Documents
1(STW24N60M2 View All Specifications)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
Featured Product
1(MDmesh II Plus™ Low Qg Power MOSFETs)
HTML Datasheet
1(STx24N60M2)
EDA Models
1(STW24N60M2 Models)
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