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Part Number Overview
Manufacturer Part Number
FQD6N60CTM-WS
Description
MOSFET N-CH 600V 4A DPAK
Detailed Description
N-Channel 600 V 4A (Tc) 80W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQD6N60CTM-WS Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
FQD6N60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQD6N60CTM_WS
FQD6N60CTM_WS-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQD6N60CTM-WS
Documents & Media
Datasheets
1(FQD6N60C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev Assembly/Test Add 8/Jul/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
HTML Datasheet
1(FQD6N60C)
EDA Models
1(FQD6N60CTM-WS Models)
Quantity Price
-
Substitutes
Part No. : IPD60R2K1CEAUMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 10,286
Unit Price. : $0.64000
Substitute Type. : Similar
Quantity Available. : 10,286
Unit Price. : $0.64000
Substitute Type. : Similar