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Part Number Overview
Manufacturer Part Number
IPD26N06S2L35ATMA1
Description
MOSFET N-CH 55V 30A TO252-3
Detailed Description
N-Channel 55 V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
621 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD26N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000252165
ROCINFIPD26N06S2L35ATMA1
IPD26N06S2L-35-ND
IPD26N06S2L-35
IPD26N06S2L35ATMA1TR
2156-IPD26N06S2L35ATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD26N06S2L35ATMA1
Documents & Media
Datasheets
1(IPD26N06S2L-35)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
()
HTML Datasheet
1(IPD26N06S2L-35)
Quantity Price
-
Substitutes
Part No. : IPD26N06S2L35ATMA2
Manufacturer. : Infineon Technologies
Quantity Available. : 2,296
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