China
Spain
Rusia
Italy
GermanyTP65H035G4WS
Part Number Overview
Manufacturer Part Number
TP65H035G4WS
Description
GANFET N-CH 650V 46.5A TO247-3
Detailed Description
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Manufacturer
Transphorm
Standard LeadTime
16 Weeks
Edacad Model
TP65H035G4WS Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
SuperGaN™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 0 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H035
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP65H035G4WS
Documents & Media
Datasheets
1(TP65H035G4WS)
Featured Product
()
HTML Datasheet
1(TP65H035G4WS)
EDA Models
1(TP65H035G4WS Models)
Quantity Price
Quantity: 510
Unit Price: $12.38967
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $13.67133
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $14.52567
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $17.94
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-