China
Spain
Rusia
Italy
Germany2SA1469R-MBS-LA9-SY
Part Number Overview
Manufacturer Part Number
2SA1469R-MBS-LA9-SY
Description
PNP EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 5 A 100MHz 2 W Through Hole TO-220ML
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
919
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SA1469R-MBS-LA9-SY
ONSSNY2SA1469R-MBS-LA9
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SA1469R-MBS-LA9-SY
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 919
Unit Price: $0.33
Packaging: Bulk
MinMultiplier: 919
Packaging: Bulk
MinMultiplier: 919
Substitutes
-