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Part Number Overview
Manufacturer Part Number
JANTXV2N7334
Description
MOSFET 4N-CH 100V 1A MO-036AB
Detailed Description
Mosfet Array 100V 1A 1.4W Through Hole MO-036AB
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1A
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/597
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Supplier Device Package
MO-036AB
Base Product Number
2N733
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
JANTXV2N7334-ND
JANTXV2N7334-MIL
150-JANTXV2N7334
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation JANTXV2N7334
Documents & Media
Datasheets
1(2N7334)
Environmental Information
()
HTML Datasheet
1(2N7334)
Quantity Price
-
Substitutes
-