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Part Number Overview
Manufacturer Part Number
HUF75631SK8
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 5.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
317
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
39mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF75631SK8
FAIFSCHUF75631SK8
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75631SK8
Documents & Media
Datasheets
1(HUF75631SK8T)
Quantity Price
Quantity: 317
Unit Price: $0.95
Packaging: Bulk
MinMultiplier: 317
Packaging: Bulk
MinMultiplier: 317
Substitutes
-