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Part Number Overview
Manufacturer Part Number
IRFR13N20DPBF
Description
MOSFET N-CH 200V 13A DPAK
Detailed Description
N-Channel 200 V 13A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFR13N20DPBF
SP001552110
INFINFIRFR13N20DPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR13N20DPBF
Documents & Media
Datasheets
1(IRF(R,U)13N20DPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR13N20DTRPBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF(R,U)13N20DPbF)
Simulation Models
1(IRFR13N20DTRPBF Spice Model)
Quantity Price
-
Substitutes
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