Part Number Overview

Manufacturer Part Number
APT1003RKLLG
Description
MOSFET N-CH 1000V 4A TO220
Detailed Description
N-Channel 1000 V 4A (Tc) 139W (Tc) Through Hole TO-220 [K]
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
694 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 [K]
Package / Case
TO-220-3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT1003RKLLG

Documents & Media

Datasheets
1(APT1003RKLL)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
HTML Datasheet
1(APT1003RKLL)

Quantity Price

-

Substitutes

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